“Resistance is futile ..!!” The major leading memory makers, namely Micron, Samsung and Hynix are co-developing the technology development efforts backed by the Hybrid Memory Cube Consortium (HMC). The technology, called a Hybrid Memory Cube, will stack multiple volatile memory dies on top of a DRAM controller.

These 3 dimensional chips will rely on the relatively new silicon VIA (Vertical Interconnect Access) technology as their inter connect.

The first Hybrid Memory Cube specification will deliver 2GB and 4GB of capacity, providing aggregate bi-directional bandwidth of up to 160GBps compared with DDR3′s 11GBps of aggregate bandwidth and DDR4, with 18GB to 20GB of aggregate bandwidth.